In the example of inductors, usually expressed in symbol C, oxide film 11, 12 and 13 edge layer magnetic film to sequence layer on a substrate 10.
Form a plane coil 14.
In the edge layer formed on 13 rim 15, to cover the planar coil and 13, 14 and 15 in the edge layer formed on the 16 magnetic film.
Substrate 10 by the same as the above example, the substrate 1 material, 13 with the above example, the edge and edge layer layer 3 of the same material.
Magnetic film by 12 with as described above of soft magnetic alloy membrane.
More specifically, the composition of the alloy has Fea Mb Oc;
M for at least one kind of rare earth elements (
Sc and Y, belong to 3 a group of the periodic table, lanthanide elements include La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Td, Dy, Ho, Er, Tm, Yb, Lu, etc. )
Or their mixture, the composition of a, b and c than (
As follows: 50 or less a $70 or less, 5 b, 30 c or less or less 30 or less or less, and a + b + c = 100.
Magnetic film can also by the composition for the Fed's 12 M & # 39;
E Of soft magnetic alloy composition.
Which M 'said element Ti, Zr and Hf, V, Nb, Ta, and at least one of W, or their mixture, composition ratio d, e and f (
As follows: 45 d 70 or less, or less 5 e or less 30, 10 f 40 or less or less, or less and d + e + f = 100.
When the substrate 10 composed when Si wafer substrate, for example, can be Si wafer by heat oxide film formed by thermal oxidation 11.
However, oxide film 11 is not a component.
Can be omitted.
Like the above example inductors B, as described above to construct the example of the inductor C showed good inductance, small and light, and is to reduce the size and weight of the planar magnetic components.
Soft magnetic alloy of the present invention consists of a specific and specific than and provide high saturation magnetic flux density, low coercive force and high resistivity of Fe base alloy composition, therefore, reduce the size and weight and increase the performance of the magnetic components, such as thin film transformer, magnetic core, thin-film inductor and switching element.